SKU:23865825476
Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001
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Description
Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001Thermal oxide Layer Research Grade, about 80% useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Sb dped Resistivity: Resistivities: 0. 01 0. 02 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mmth Orientation: (100) + 0. 5o
Certificate of analysis
Customized die-cutters are available upon request
EPD: <=500 /cm^2
no metal support
Using Air Compressor driven when operating outside the glove box
Elongation (at break) 30%
cm (If you would like to measure the resistivity accurately
The curve below illustrates the surface resistivity of SiC
and milling sintered ceramic samples up to 0
15mm(T) Active Material Proportion in Powder 94
Overall Dimensions
MSK-160E is a compact Pressure Adjustable Electric Crimper for CR2016
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