SKU:74541940886
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 23 - Jul 28
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cmThermal oxide Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" dia + 0. 5 mm x 0. 525 mm th Orientation: (100) + 0. 5o Polish: one side
Mobility >E5 cm2/Vs
One USB to Serial port cable (Adapter cable
Calcining & Stintering
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's
such as the separator of battery Application Notes It is suggested to use a urethane square (1/16" thick
Related data Please click here to see XRD Rocking curve of GaN template
Polishing: One side CMP polished with free sub-surface damage
Specifications Material Stainless Steel 304 Case
Size: 3" diameter x 0
Take out the pellet sample from die
Note: These slot-die heads are for DIY slot die coating
Resistivities: 0
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