SKU:92615025142

SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished

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Regular price $608.14 USD
Regular price $652.14 USD Sale price $608.14 USD
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17

Description

SiC - 4H (0001), 2" dia. x0.3 mm th., One side polishedSpecifications of Substrate Orientation: <0001> 30? Edge Orientation : <11 20>1<10 10>1 Dimension: 2"+ 0. 15mm x 0. 3 + 0. 05mm Polished: one side polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing: Silicon face EPI polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N

Minor Flat:                       EJ(0-1-1)+-1 degree

please choose alumina/Nylon jars and zirconia media

from our customer experience

and probe tip amplitude

The PTFE die (found at the top die) ejects the cell casing after crimping via spring-loaded pressure

Conductive type:      N- type/ P-doped

MTI has granted the patent 201120462024

Sc doped GGG is  a good magneto-optical crystal and is excellent substrate for for growing bismuth-substituted iron garnet epitaxial films

25 mm +/- 0

Size: 10mm x 10mm x 0

Ploshing:                            Two sides polished

005mm Arbor 0

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