SKU:92615025142
SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
SiC - 4H (0001), 2" dia. x0.3 mm th., One side polishedSpecifications of Substrate Orientation: <0001> 30? Edge Orientation : <11 20>1<10 10>1 Dimension: 2"+ 0. 15mm x 0. 3 + 0. 05mm Polished: one side polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing: Silicon face EPI polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N
Minor Flat: EJ(0-1-1)+-1 degree
please choose alumina/Nylon jars and zirconia media
from our customer experience
and probe tip amplitude
The PTFE die (found at the top die) ejects the cell casing after crimping via spring-loaded pressure
Conductive type: N- type/ P-doped
MTI has granted the patent 201120462024
Sc doped GGG is a good magneto-optical crystal and is excellent substrate for for growing bismuth-substituted iron garnet epitaxial films
25 mm +/- 0
Size: 10mm x 10mm x 0
Ploshing: Two sides polished
005mm Arbor 0
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