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SKU:9751340333
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 23 - Jul 28
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >1000 ohm. cm Size: 3"diameter + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers
Mobility: (3450-4150) cm^2/V
30mm Note:
Resistivity: 5-10
For example
Heat able Vacuum Platform
Please keep the thermal gradient less than 100°C/ inch to avoid cracking
EQ-LSS-021
NCMOH622 (Ni:Co:Mn = 6
and life cycle can be set up by touch screen
Vacuum Pump ( Optional ) Vacuum pump is NOT included
Options Part 2: 6
Designed for MTI OTF-1200Desktop Quartz Tube Furnace
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