SKU:24521989645
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1USThermal oxide SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B dped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: Two sides polished Surface roughness, Ra: < 5A (RMS) Related
Surface roughness: <15 A
Name Qty 1 CIP pressing die 1 set 2 Black Rubber Rings O
Surface finish(Ra): < 10 A
Speed 2800 RPM constant
Size: 10x10x1
laser sealed edge
Surface roughness: < 30 A ( by AFM)
now you can make a single or multi-layer pouch cell to explore new generation battery material with more practical data at an ever-lower cost
MSK-110 is a new design and CE Certified coin cell crimper with lighter weight and a smaller footprint
Ball mill or ground the powder to the size of 32~75 microns powder before pressing
8 First charge and discharge efficiency (%) 87 Charge & Discharge Graph
Polish: Two side EPI -ready polished
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