SKU:44112969377
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05CThermal oxide Layer Research Grade, about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index: 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm cm Size: 50. 8 diameter + 0. 5 mm x 0. 50 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma
Polished: One side side
Macro Defect Density <=5 cm-2
Constant Current & Voltage Discharging
Hardness: 3 (Mohs)
5 mV per degree (°F or °C) analog output
Please select the voltage in the options menu
Always ready to removing samples
Single crystal Si
Orientation: (111)
- 160-180C for lower blade
5% reading ±2mA
One needle valve is built-in to control gas flowing rate
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