SKU:67375707587
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1USThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter + 0. 5 mm x 0. 525 mm Orientation: (100) + 1o Polish:
Silicon wafer Orientation: (100) + / - 0
Instruction Video
Tungsten Carbide Milling Ball
Size: 10x10x1
The digital micrometer heads are built-in doctor blade frame to adjust the gap between slot die and substrate
The die set must be cleaned with alcohol after each use to avoid corrosion
0mm thick mesh disc (Ø1mm holes on it) and top case with PP (Polypropylene) sealing O-ring
Lock Clamps Video Application Notes Must place 4 jars or 2 in symmetrical with similar weight in the ball mill to keep balance during rotation
Distinctive “gel mode” discharges the pipette very slowly into electrophoresis gels
Note: MTI does NOT carry AG5 cell cases
please keep the 24V power adaptor outside of glovebox with the KF40 feedthrough
Range 1: 0
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